کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684324 | 1010526 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ion track formation below 1Â MeV/u in thin films of amorphous SiO2
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ion track formation below 1Â MeV/u in thin films of amorphous SiO2 Ion track formation below 1Â MeV/u in thin films of amorphous SiO2](/preview/png/1684324.png)
چکیده انگلیسی
The evolution of pore diameter and etch yield were studied as a function of energy for each ion species. The track etching threshold in the electronic stopping power (dE/dx)e and specific energy was found to be approximately 1.5 keV/nm and 0.04 MeV/u, respectively, which is lower than previously observed. In a transition regime, 1.5 keV/nm < (dE/dx)e < 4.0 keV/nm, etching yields were less than 100%. For (dE/dx)e > 4.0 keV/nm all tracks were revealed, i.e. etching efficiency was 100%, corresponding to continuous tracks. Above the etching threshold the pore diameter increased with energy and (dE/dx)e for each ion species, and attained a maximum value before the electronic stopping power maximum of the respective ion was reached.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 243, Issue 1, January 2006, Pages 119-126
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 243, Issue 1, January 2006, Pages 119-126
نویسندگان
J. Jensen, A. Razpet, M. SkupiÅski, G. Possnert,