Ion energy dependence of interface parameters of ion beam sputter deposited W/Si interfaces

W thin films and W/Si/W tri-layer samples have been deposited on c-Si substrates in a home-made ion beam sputtering system at 1.5 × 10−3 Torr Ar working pressure, 10 mA grid current and at different Ar+ ion energies between 600 and 1200 eV. Grazing incidence X-ray reflectivity (GIXR) measurements in specular and diffused (detector scan) geometry have been carried out on the above samples. The measured GIXR spectra were fitted with theoretically simulated spectra and the different interface parameters viz., interface width, interface roughness and interface diffusion have been estimated for both Si-on-W and W-on-Si interfaces in the above samples. The variation of the above interface parameters as a function of ion energy used for W sputtering has been studied.