Ferromagnetic modification of ZnO film by Fe+ ions implantation

The ZnO-based diluted magnetic semiconductors (DMSs) were achieved by ion implantation. Eighty kilo-electron-volt Fe+ ions were implanted into n-type ZnO films at room temperature with doses ranging from 1 × 1016 cm−2 to 8 × 1016 cm−2 and subsequently annealed at 700 °C for 1 h in air ambient. PIXE was employed to determine the Fe-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters were detected within the sensitivity of XRD. Raman spectrum measurement showed that the Fe ions incorporated into the crystal lattice positions of ZnO through substitution of Zn atoms. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The relationships between the Fe-implanted content and the ferromagnetic property are discussed.