کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684577 | 1518764 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of mono-layered gold nanoparticles in shallow depth of SiO2 thin film by low-energy negative-ion implantation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Mono-layered gold nanoparticles just below the surface of silicon oxide film have been formed by a gold negative-ion implantation at a very low-energy, where the deviation of implanted atoms was sufficiently narrow comparing to the size of nanoparticles. Gold negative ions were implanted into SiO2 thin films on Si substrate at energies of 35, 15 and 1 keV. The samples were annealed in Ar flow for 1 h at 900 or 1000 °C. Cross-sectional TEM observation for the implantation at 1 keV showed existence of Au nanoparticles aligned in the same depth of 5 nm from the surface. The nanoparticles had almost same diameter of 7 nm. The nanoparticles were found to be gold single crystal from a high-resolution TEM image.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 242, Issues 1–2, January 2006, Pages 125–128
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 242, Issues 1–2, January 2006, Pages 125–128
نویسندگان
H. Tsuji, N. Arai, K. Ueno, T. Matsumoto, N. Gotoh, K. Adachi, H. Kotaki, Y. Gotoh, J. Ishikawa,