Correlation between RBS, reflectometry and ellipsometry data for TiO2 films deposited on Si

Using metal plasma immersion ion implantation and deposition (MePIIID) it is possible to obtain highly textured rutile layers within a wide range of stoichiometry, depending on the oxygen gas flow to titanium arc current ratio, on silicon. Even for a composition of TiO1.8, only rutile reflections were found with X-ray diffraction. Reflectometry spectra show an internal structure of two layers with a similar density. At the same time, the layer thickness obtained from spectroscopic ellipsometry is considerable less than that from Rutherford backscattering spectroscopy (RBS), indicating that a rather abrupt transition from metallic to semiconducting is observed within the films, depending on the process conditions.