کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684664 | 1518759 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation of the defect pair VPb–VO in PbMoO4 crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Simulation of the defect pair VPb–VO in PbMoO4 crystals Simulation of the defect pair VPb–VO in PbMoO4 crystals](/preview/png/1684664.png)
چکیده انگلیسی
A simulation study has been performed to investigate the defects in PbMoO4, based on the interatomic potentials empirically fitted to the known crystal properties. The formation energies of the isolated point defects VPb2-, VO2+, the cluster defects VPb2-–VO2+, VPb2-–VO2+–VPb2- and VO2+–VPb2-–VO2+ have been calculated. It is theoretically demonstrated that most of VPb2- and VO2+ in the as-grown PbMoO4 crystal exist in the form of the vacancy pair VPb2-–VO2+, which would play important roles in the formation and transformation process of photo-chromic effect in PbMoO4 crystal.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 260, Issue 2, July 2007, Pages 619–622
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 260, Issue 2, July 2007, Pages 619–622
نویسندگان
Jianyu Chen, Qiren Zhang, Tingyu Liu, Zexu Shao, Chunying Pu,