Study of interaction of C+ ion beam with a Si pitch grating on a macro-scale level

A Si pitch grating has been exposed to a 6 keV C+ ion beam at normal angle of incidence and at an angle of 42° parallel to the structure. Sputtering of the grating has been observed experimentally by Rutherford backscattering, the areal density of implanted C ions into the Si structure has been measured by nuclear reaction analysis. The bombardment has been simulated by the SDTrimSP-2D code at normal angle of incidence, as well as at angles of 42° parallel and perpendicular to the structure. The numerical simulations show reasonable agreement with experimental results. Significant differences in Si sputtering and implantation of C ions parallel and perpendicular to the structure indicate an anisotropy effect, which could not be observed in the 1D case.