کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684768 | 1518760 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dynamics of photo-ionization, heating and crystallization of implanted silicon during laser annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The dynamics of the nanosecond laser annealing of the implanted silicon by probing the implanted layer with infrared radiation (1.06 μm) in the conditions of the total internal reflection is investigated. The obtained experimental data are compared with the results of computer simulation of the studied processes. The data characterizing the contributions of intrinsic absorption of the probing beam and the absorption on free carriers generated in Si by laser radiation are obtained. The temperature dependence of the intrinsic absorption coefficient in Si during high-temperature heating is estimated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 257, Issues 1–2, April 2007, Pages 208–211
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 257, Issues 1–2, April 2007, Pages 208–211
نویسندگان
G.D. Ivlev, E.I. Gatzkevich, R.M. Bayazitov, R.I. Batalov, I.B. Khaibullin,