کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684775 | 1518760 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modification of He implantation induced defects using fluorine co-implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
During device manufacture, metal contamination has a large effect on silicon-based device performance. Of the available gettering techniques, helium implantation is widely used but the high fluence required is a major drawback. In this paper, the impact of F co-implantation on He implantation-induced defects has been carefully studied. Firstly, our results show that both interstitial and vacancy defects are present in the defect band for all implantation conditions. We show that F implantation may lead to cavity formation at high temperature as expected. The TEM observations also show that, at high temperature, the shape and size of the He-induced defects are significantly affected by the fluorine co-implantation. In particular, cavities are drastically modified by the addition of F, which promotes cavity growth. These results enable us to understand the defect interactions better and constitute a good background to gettering techniques for future device processing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 257, Issues 1â2, April 2007, Pages 240-243
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 257, Issues 1â2, April 2007, Pages 240-243
نویسندگان
D. Alquier, G. Gaudin, M.F. Beaufort, S.E. Donnelly, L. Haworth, F. Cayrel,