GEANT4 simulation of slow positron beam implantation profiles

The paper presents the positron implantation profiles, which are important for proper interpretation of data produced in slow-positron depth defect spectroscopy (VEPAS). In the paper, we compared the profiles reported in other publications and those obtained using the GEANT4 codes, which are used for the simulation of interaction of energetic particles with matter. The comparison shows that the GEANT4 codes produce profiles which match fairly well with those generated by other codes, which take into account more accurately processes at low energies when positrons interact with core electrons, valence electrons, plasmons etc. The profiles in different materials simulated for different implant energies were parameterized using two analytical formulas: the Makhovian profile and the profile proposed by Ghosh et al. [V.J. Ghosh, D.O. Welch, K.G. Lynn, in: E. Ottewite, A.H. WeissSlow (Eds.), Positron Beam Techniques for Solids and Surfaces, Jackson Hole, Wyoming, AIP Conference Proceedings, Vol. 303, New York, 1994, p. 37]. The adjustable parameters obtained are presented in Table 1 and Table 2. The total backscattering probability obtained from the GEANT4 simulations is in agreement with experimental data reported.