کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684867 | 1010540 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Incidence-angle dependent Cs incorporation in Si during low-energy bombardment: A dynamic computer simulation study
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The implantation of Cs atoms in silicon was investigated by dynamic computer simulations using the Monte-Carlo code T-DYN that takes into account the gradual change of the target composition due to the Cs irradiation. The incorporation of Cs atoms was studied for incidence angles ranging from 0° to 85° and for four impact energies (0.2, 0.5, 1 and 3 keV). The total implantation fluences were (1-2) Ã 1017 Cs/cm2, well above the values required to reach a stationary state. The steady-state Cs surface concentrations exhibit a pronounced dependence on impact angle and energy. At normal incidence, they vary between â¼0.57 (at 0.2 keV) and â¼0.18 (3 keV), but decrease with increasing incidence angle. Under equilibrium, the partial sputtering yield of Si exhibits the typical dependence on incidence angle, first increasing up to a maximum value (at â¼70°-75°) and declining sharply for larger angles. For all irradiation conditions a strongly preferential sputtering of Cs as compared to Si atoms is found, increasing with decreasing irradiation energy (from 4.6 at 3 keV to 7.2 at 0.2 keV) and for nearer-normal incidence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issue 16, 15 August 2009, Pages 2608-2611
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issue 16, 15 August 2009, Pages 2608-2611
نویسندگان
Hubert Gnaser,