کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684957 | 1010541 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Damage buildup and the molecular effect in Si bombarded with PFn cluster ions
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Damage buildup and the molecular effect in Si bombarded with PFn cluster ions Damage buildup and the molecular effect in Si bombarded with PFn cluster ions](/preview/png/1684957.png)
چکیده انگلیسی
We study the molecular effect (ME) in damage accumulation in Si bombarded at room temperature with atomic P and F and cluster PFn (n = 2 and 4) ions with an energy of 2.1 keV/amu. Correct ion irradiation conditions for unambiguous studies of the ME are discussed. Rutherford backscattering/channeling spectrometry results show that the damage buildup behavior strongly depends on the cluster ion size, and the ME efficiency increases rapidly with increasing the number of atoms in cluster ions. Moreover, the ME efficiency decreases with increasing the defect generation rate, indicating that dynamic annealing processes, rather than nonlinear energy spikes, play a major role in the ME for these irradiation conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 256, Issue 1, March 2007, Pages 207-210
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 256, Issue 1, March 2007, Pages 207-210
نویسندگان
A.I. Titov, A.Yu. Azarov, L.M. Nikulina, S.O. Kucheyev,