کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684975 | 1010541 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Swift heavy ion induced modifications of silicon (sub) oxide nitride layer structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Swift heavy ion induced modifications of silicon (sub) oxide nitride layer structures Swift heavy ion induced modifications of silicon (sub) oxide nitride layer structures](/preview/png/1684975.png)
چکیده انگلیسی
Irradiation of a bilayer consisting of a deuterated silicon nitride and a silicon sub-oxide film with heavy ions in the electronic stopping regime results in incorporation of nitrogen and deuterium in the sub-oxides. This experimental observation is discussed within the model, originally established to understand the loss of hydrogen from hydrogenated organic and inorganic materials. This and other reported observations of transport within the bilayer emphasize the role of trapping and permeation in the model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 256, Issue 1, March 2007, Pages 300–304
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 256, Issue 1, March 2007, Pages 300–304
نویسندگان
W.M. Arnoldbik, F.H.P.M. Habraken,