Electronic sputtering of nitrides by high-energy ions

We have extended measurements of the electronic sputtering yields to nitrides (Si3N4 and AlN) and oxides (Y2O3 and ZrO2) for a better understanding of the mechanism of the electronic sputtering (energy transfer from the electronic system to lattice). It appears that the present results fit to the suggested band-gap dependence [N. Matsunami, M. Sataka, A. Iwase, S. Okayasu, Nucl. Instr. and Meth. B 209 (2003) 288], indicating again that the band-gap is an important factor in the electronic sputtering and supporting the multi-exciton mechanism. Roles of bond nature (covalency and ionicity) in the electronic sputtering have been discussed.