کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685026 | 1518729 | 2012 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The Energy-Loss Function (ELF) of silicon is used to calculate differential and total inelastic cross-sections of incident electrons. The model is validated in the 50 eV–50 keV incident energy range by comparing the inelastic cross-sections, stopping powers, and ranges to experimental and calculated data from the literature. It is applicable down to 16.7 eV. The cross sections are then used to simulate low-energy electron tracks in silicon with Geant4, using a similar implementation as the Geant4-DNA extension; this new Geant4 extension is called MuElec. Generation of low-energy electrons is clearly seen. The obtained ranges are consistent with experimental data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 288, 1 October 2012, Pages 66–73
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 288, 1 October 2012, Pages 66–73
نویسندگان
A. Valentin, M. Raine, J.-E. Sauvestre, M. Gaillardin, P. Paillet,