کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1685026 1518729 2012 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon
چکیده انگلیسی

The Energy-Loss Function (ELF) of silicon is used to calculate differential and total inelastic cross-sections of incident electrons. The model is validated in the 50 eV–50 keV incident energy range by comparing the inelastic cross-sections, stopping powers, and ranges to experimental and calculated data from the literature. It is applicable down to 16.7 eV. The cross sections are then used to simulate low-energy electron tracks in silicon with Geant4, using a similar implementation as the Geant4-DNA extension; this new Geant4 extension is called MuElec. Generation of low-energy electrons is clearly seen. The obtained ranges are consistent with experimental data.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 288, 1 October 2012, Pages 66–73
نویسندگان
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