Ion beam induced charge imaging of charge transport in CdTe and CdZnTe

Ion beam induced charge (IBIC) imaging is a powerful technique for quantitative mapping of the charge transport performance of wide bandgap semiconductor materials. In this paper we present results from a study of electron and hole mobility–lifetime product and drift mobility in CdTe:Cl and CdZnTe, which are semiconductor materials used for radiation detector applications. IBIC imaging has been used to produce mobility–lifetime product maps in CdTe:Cl and CdZnTe, revealing the influence of extended defects and tellurium inclusions and assessing the large area response uniformity of the materials. The recent extension of this method in the form of digital time-resolved IBIC is also discussed and time of flight maps are presented which give quantitative images of electron and hole drift mobility.