Depth profiling of carbon in silicon using the 12C(p, p′γ) reaction

An analytical method has been developed for the measurement of a carbon depth profile of the region a few tens of μm from the surface, using a 12C(p, p′γ) reaction. Measurements for a SiC sample coated with a silicon layer and a carbon-implanted silicon sample were performed using this method. Two charged particle detectors and two γ-ray detectors were utilized for the coincident detection of scattered protons and γ-rays from the first excited state (Ex = 4.4 MeV) of 12C. The measured depth profiles agree well with results obtained using a surface profiler and an Auger microprobe. These results demonstrate that this method is useful for the non-destructive analysis of carbon at depths of a few tens of μm from the surface.