کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685312 | 1010553 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of 0.28–2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of 0.28–2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use Effects of 0.28–2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use](/preview/png/1685312.png)
چکیده انگلیسی
GaInP/GaAs/Ge triple-junction solar cells were irradiated with 0.28, 0.62 and 2.80 MeV protons with fluences ranging from 1 × 1010 cm−2 to 1 × 1013 cm−2. Their performance degradation is analyzed using current–voltage characteristics and spectral response measurements. The degradation rates of the short circuit current, open circuit voltage, and maximum power output increase with fluence, but decrease with increasing proton energy. It was also observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 5, March 2008, Pages 745–749
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 5, March 2008, Pages 745–749
نویسندگان
Wang Rong, Liu Yunhong, Sun Xufang,