کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685400 | 1010557 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study on the degradation of GaAs/Ge solar cells irradiated by <200Â keV protons
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Damage effects in GaAs/Ge solar cells irradiated by <200Â keV protons were studied by measuring their electrical properties and spectral response together with SRIM simulations. Proton energies of 40, 70 and 170Â keV were chosen. Experimental results show that the short circuit current, open circuit voltage and maximum power decrease with increasing proton fluence. The degradation of the open circuit voltage is highest for 70Â keV irradiation and lowest for 40Â keV irradiation. The degradation of short circuit current decreases with increasing proton energy. According to SRIM simulations and spectral response analysis, the above changes in electrical properties are mainly related to damage in different regions of the solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 2, January 2008, Pages 267-270
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 2, January 2008, Pages 267-270
نویسندگان
Hu Jian-Min, Wu Yi-Yong, Zhang Zhongwei, Yang De-Zhuang, He Shi-Yu,