کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685475 | 1010562 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing effects in silicon implanted with helium
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Silicon samples were implanted with helium and analyzed by atomic force microscopy (AFM) and Raman spectroscopy before and after annealing in the range of 523–1273 K. After annealing at 523 K, the amorphous area induced by He-ion implantation at room temperature was partially recovered and grain sizes became larger. The surface morphology was analyzed through AFM measurements and it was observed that root mean square of the surface roughness alters upwards and then downwards with annealing temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 24, December 2008, Pages 5112–5115
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 24, December 2008, Pages 5112–5115
نویسندگان
Bingsheng Li, Chonghong Zhang, Lihong Zhou, Yitao Yang, Honghua Zhang,