کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685486 | 1010562 | 2008 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon](/preview/png/1685486.png)
Amorphous carbon (a-C) films were deposited on Si(1 0 0) wafers by a filtered cathodic vacuum arc (FCVA) plasma source. A negative electrical bias was applied to the silicon substrate in order to control the incident energy of carbon ions. Effects of the electrical bias on the a -C/Si interface characteristics were investigated by using standard Rutherford backscattering spectrometry (RBS) in the channeling mode with 2.1-MeV He2+He2+ ions. The shape of the Si surface peaks of the RBS/channeling spectra reflects the degree of interface disorder due to atomic displacement from the bulk position of the Si crystal. Details of the analysis method developed are described. It was found that the width of the a-C/Si interface increases linearly with the substrate bias voltage but not the thickness of the a-C film.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 24, December 2008, Pages 5175–5179