کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685534 | 1010565 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
EXAFS and SR-XRD study on Mn occupations in Zn1−xMnxO diluted magnetic semiconductors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: EXAFS and SR-XRD study on Mn occupations in Zn1−xMnxO diluted magnetic semiconductors EXAFS and SR-XRD study on Mn occupations in Zn1−xMnxO diluted magnetic semiconductors](/preview/png/1685534.png)
چکیده انگلیسی
Mn-doped ZnO films were prepared by radio frequency (RF) magnetron sputtering on sapphire substrate. Mn content was determined by proton induced X-ray emission (PIXE). Only Mn, no other magnetic impurities such as Fe, Co and Ni were observed. Also, no precipitates such as MnO, Mn3O4 and other secondary phases or Mn clusters, were found by SR-XRD, even in Mn-doped content up to 11 at.%. EXAFS analyses showed that Mn atoms were incorporated into ZnO crystal lattice by occupying the sites of zinc atoms.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 21, 1 November 2011, Pages 2610–2613
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 21, 1 November 2011, Pages 2610–2613
نویسندگان
M. Li, B. Zhang, J.Z. Wang, L.Q. Shi, H.S. Cheng, Y.Z. Wang, H.Y. Lv, T.Y. Yang, W. Wen, F.C. Hu,