کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1685534 1010565 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
EXAFS and SR-XRD study on Mn occupations in Zn1−xMnxO diluted magnetic semiconductors
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
EXAFS and SR-XRD study on Mn occupations in Zn1−xMnxO diluted magnetic semiconductors
چکیده انگلیسی

Mn-doped ZnO films were prepared by radio frequency (RF) magnetron sputtering on sapphire substrate. Mn content was determined by proton induced X-ray emission (PIXE). Only Mn, no other magnetic impurities such as Fe, Co and Ni were observed. Also, no precipitates such as MnO, Mn3O4 and other secondary phases or Mn clusters, were found by SR-XRD, even in Mn-doped content up to 11 at.%. EXAFS analyses showed that Mn atoms were incorporated into ZnO crystal lattice by occupying the sites of zinc atoms.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 21, 1 November 2011, Pages 2610–2613
نویسندگان
, , , , , , , , , ,