کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1685565 1010567 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ionization in symmetric and nearly symmetric low energy ion–surface collisions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Ionization in symmetric and nearly symmetric low energy ion–surface collisions
چکیده انگلیسی

Multiply charged ions are emitted following bombardment of Al(1 0 0) and Si(1 1 1) by low energy Si+ and P+ ions. The ion formation is attributed to inner-shell electron promotion during a hard collision between symmetric or nearly symmetric atomic species, followed by Auger decay outside the surface. The relative yield of triply charged Si ions for Si+ → Si(1 1 1) is much smaller than that of triply charged Al ions in direct recoil Si+ → Al(1 0 0) experiments. This difference can be explained by assuming that only one 2p hole is produced in a Si atom during the symmetric collision, whereas a double 2p hole is also produced in the Al atom following the nearly symmetric Si–Al collision. Further evidence is provided by the complimentary experiment P+ → Si(1 1 1), where Si3+ regains its intensity and Si4+ emerges as a result of a double 2p hole decay with shake-off.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 264, Issue 1, November 2007, Pages 23–28
نویسندگان
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