کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685735 | 1010574 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Amorphous phase and anisotropy induced by glancing incident ion beams in Co-Nb films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Amorphous phase and anisotropy induced by glancing incident ion beams in Co-Nb films Amorphous phase and anisotropy induced by glancing incident ion beams in Co-Nb films](/preview/png/1685735.png)
چکیده انگلیسی
Co-Nb amorphous films were prepared with the aid of glancing incident ion beams during deposition process. Influence of ion interaction to phase formation and fine microstructure was studied. Amorphous range is about 19 to 63Â at.% Co fractions, which is wider than that obtained by perpendicular ion bombardment (28 to 68Â at.% of Co fractions). A ripple or a bamboo raft pattern with nano-scale periodicity is observed in the TEM (transmission electron microscopy), SEM (scanning electron microscopy) and AFM (atomic force microscopy) images. The sizes of the image patterns are characterized by correlation length calculated from height-height correlation function (HHCF). The correlation length along the ion incidence is longer than that perpendicular to the ion incidence. Analysis regards that the glancing incident ion beams have high efficiency in both rapid cooling and ion mixing (IM). The main pattern feature in the images mainly comes from surface erosion. Other fine microstructure and the difference among the images result from surface diffusion or viscous flow effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 16, August 2008, Pages 3545-3551
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 16, August 2008, Pages 3545-3551
نویسندگان
Fang Lv, Fei Zeng, Yu Gu, Feng Pan,