کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1685751 1010574 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High precision 180Hf ion implantation using a high-current ion implanter
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
High precision 180Hf ion implantation using a high-current ion implanter
چکیده انگلیسی

The development of accurate mass spectrometry, enabling the identification of all the ions extracted from the ion source and further precise 180Hf isotope implantation, in a high current implanter is described. The spectrometry system uses two signals (x–y graphic), one proportional to the magnetic field (x-axes), taken from the high-voltage potential with an optic fiber system, and the other proportional to the beam current intensity (y-axes), taken from a beam-stop. The ion beam mass register in a mass spectrum of all the elements magnetically analyzed with the same radius and defined by a pair of analyzing slits as a function of their beam intensity is presented. Hence, it is possible to implant 180Hf+, with less than 1% contamination from neighboring isotopes, in order to conduct material characterization studies by Perturbed Angular Correlations. The precision of the low fluence ion implantation has been done by neutron activation analysis.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 16, August 2008, Pages 3661–3666
نویسندگان
, , ,