کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1686009 1518757 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An optoelectronic device in bulk LiF with sub-micron periodic gratings fabricated by interference of 400 nm femtosecond laser pulses
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
An optoelectronic device in bulk LiF with sub-micron periodic gratings fabricated by interference of 400 nm femtosecond laser pulses
چکیده انگلیسی

Sub-micron periodic gratings of transparent materials are holographically fabricated by interference with the second harmonic (400 nm) of a mode-locked Ti:sapphire oscillator–amplifier laser. As one optoelectronic application, a pulsed, room temperature laser action in bulk lithium fluoride is demonstrated, for the first time, in the green spectral region based on the laser-active F3+ colour centres utilizing a distributed feedback structure encoded by interference of 400 nm femtosecond laser pulses. A lasing output with a linewidth of 1 nm is obtained at approximately 539 nm, which value reflects the selective laser resonator. Realization of green and red distributed feedback colour centre laser action based on the F3+ and F2 centres in LiF excited by a single wavelength can be expected.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12–13, June 2008, Pages 2762–2765
نویسندگان
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