کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686010 | 1518757 | 2008 | 6 صفحه PDF | دانلود رایگان |
Silicon carbide exhibits different behaviours in response to ion beam irradiation depending on the ion energy. At room temperature, this material is well known to be easily amorphized by low energy (i.e. a few hundred keV) ions. On the other hand, recent studies revealed that high energy (i.e. several hundred MeV) ions do not produce damage in crystalline silicon carbide. More interestingly, they instead induce at room temperature an epitaxial recrystallization in pre-damaged material by low energy ion irradiation. These swift heavy ion induced effects can both be interpreted in term of the thermal spike model where it is demonstrated that the amorphous phase does effectively attain the liquid state in contrast to the case of the crystalline structure.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12–13, June 2008, Pages 2766–2771