کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686020 | 1518757 | 2008 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Ion implantation of iodine into silicon carbide: Influence of temperature on the produced damage and on the diffusion behaviour Ion implantation of iodine into silicon carbide: Influence of temperature on the produced damage and on the diffusion behaviour](/preview/png/1686020.png)
Silicon carbide (SiC) is anticipated as a potential cladding material for the nuclear fuel in the future high-temperature gas cooled nuclear reactors. In such a harsh environment, SiC will be submitted to energetic particles giving rise to atomic displacements which can alter its retention capability for the fission products. The aim of the present work is to examine the effects induced by the implantation of a typical fission product, namely iodine (I), into SiC at different temperatures and to study its diffusion behaviour under temperature and ion post-irradiation. Ion implantations at 400 or 600 °C produce significantly less damage than implantation at room temperature followed by subsequent thermal annealing. In addition, there is no noticeable change in the I distribution profile even after thermal annealing up to 1000 °C or after post-irradiation at 600 °C with energetic heavy ions.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12–13, June 2008, Pages 2810–2813