کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686021 | 1518757 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Swift heavy ions effects in III-V nitrides
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Four III-V nitrides, BN, AlN, GaN and InN have been irradiated under normal incidence at 300Â K at GANIL (Caen, France) accelerator with 132Â MeV 209Pb32+ swift heavy ions. Specimens were ion thinned for TEM observations before irradiation. Boron and aluminium nitrides were undamaged by the irradiation unlike the two others. In gallium and indium nitrides, ion impacts are found, forming circular areas. Their diameters are 3 and 8Â nm, respectively. In fact, two regions may be distinguished around the ion impact: the inner part attributed to the section of the track formed along the ion path and corresponding to re-crystallized material and the external part to a strained material. For InN, structural defects, dislocations or interstitial loops are localised at the interface between the two regions and in the inner part.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12â13, June 2008, Pages 2814-2818
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12â13, June 2008, Pages 2814-2818
نویسندگان
S. Mansouri, P. Marie, C. Dufour, G. Nouet, I. Monnet, H. Lebius,