کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686119 | 1010588 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-energy electron induced gain degradation in bipolar junction transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
This paper describes the effect of 8 MeV electron beam on the forward current gain of space borne commercial indigenous bipolar junction transistors 2N2219A (npn), 2N3019 (npn) and 2N2905A (pnp). The devices are exposed to 8 MeV electron in the biased condition. The collector characteristics and Gummel plots are obtained as a function of accumulated dose. An excess base current model as well as Messenger-Spratt equation have been used to account for the observed gain degradation. The results indicate that 8 MeV electrons of high dose rate induce gain degradation by increasing the base current as well as decrease in collector current. The current gain degradation appears to be predominantly due to displacement damage in the bulk of the transistor. Off-line measurements of the hFE of the irradiated transistors indicate that the displacement induced defect and recombination centers do not anneal even at 150 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 251, Issue 1, September 2006, Pages 157-162
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 251, Issue 1, September 2006, Pages 157-162
نویسندگان
S.R. Kulkarni, M. Ravindra, G.R. Joshi, R. Damle,