Measurements of the stopping powers of He ions incident along the different channel axes and channel planes of Si

One serious issue limiting the accuracy of Rutherford backscattering spectrometry (RBS) is that the stopping powers of channeled and non-channeled particles differ substantially. Consequently, it brings errors not only in the energy-depth conversion of RBS spectra, but also in the quantitative analysis of the disorder profile. In this study, we present measurements of the stopping powers of 4He+ ions channeled along crystallographic axes of Si〈1 0 0〉, 〈1 1 0〉, 〈1 1 1〉, and also along crystallographic planes of (1 0 0) and (1 1 0) in the energy region of 0.6–2 MeV. The aim of this study is to provide an accurate energy-depth conversion for channeling RBS data.