کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686477 | 1518763 | 2006 | 4 صفحه PDF | دانلود رایگان |
Substitutional boron atoms in silicon experience an off-lattice displacement during ion-irradiation with energetic light ions at room temperature. The off-lattice displacement rate has been measured in a B-doped Si by channelling analyses using nuclear reaction (650 keV proton beam, 11B(p,α)8Be). The normalized channeling yield χ of B increases with the ion fluence until it saturates at a value smaller than 1. This indicates that B is not totally displaced in a random site. The carrier concentration in layer, measured by Van Der Pauw and Hall effect techniques, decreases during irradiation until complete de-activation of B occurs. The comparison of electrical and structural analyses is consistent with the formation of small, not electrically active B complexes stable at room temperature in presence of an excess of point defects.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1–2, August 2006, Pages 181–184