کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686482 | 1518763 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Orientation dependent ion beam mixing of Ta/Si interfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV Ar, 90 keV O and 90 keV C. Rutherford backscattering spectroscopy (RBS) was used to examine mixing effects. Atomic force microscopy (AFM) was applied for investigating the surface roughness. Ballistic mixing, radiation enhanced diffusion and thermal spike effects were found in both systems. Si substrates of the orientation (1 0 0) led to smaller mixing rates at the Ta/Si interface as compared to Si(1 1 1).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1–2, August 2006, Pages 200–203
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1–2, August 2006, Pages 200–203
نویسندگان
W. Berky, S. Gottschalk, R.G. Elliman, A.G. Balogh,