Heavy ion beam induced current/charge (IBIC) through insulating oxides

Model experiments were performed on MOS (metal-oxide semiconductor) capacitors to study ion beam induced charge generation in silicon-on-insulator (SOI) devices. Surprisingly large induced charge was found and a lateral non-uniformity of the induced charge was discovered across the top electrode of the capacitor. In this paper we will give a simple model for the charge induction in MOS structures and an explanation of the lateral changes in the amount of induced charge.