کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1686721 1010617 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Total ionizing dose effects in high voltage devices for flash memory
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Total ionizing dose effects in high voltage devices for flash memory
چکیده انگلیسی
The effect of size and substrate bias conditions after irradiation on the total ionizing dose response of high voltage devices for flash memory has been investigated. Different sensitivity of transistors with different gate width was observed, which is well known as the radiation induced narrow channel effect. A charge sharing model was used to explain this effect. The negative substrate bias voltage after irradiation showed considerable impact on the parasitic transistor's response by suppressing leakage current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 23, 1 December 2010, Pages 3498-3503
نویسندگان
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