کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686721 | 1010617 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Total ionizing dose effects in high voltage devices for flash memory
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The effect of size and substrate bias conditions after irradiation on the total ionizing dose response of high voltage devices for flash memory has been investigated. Different sensitivity of transistors with different gate width was observed, which is well known as the radiation induced narrow channel effect. A charge sharing model was used to explain this effect. The negative substrate bias voltage after irradiation showed considerable impact on the parasitic transistor's response by suppressing leakage current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 23, 1 December 2010, Pages 3498-3503
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 23, 1 December 2010, Pages 3498-3503
نویسندگان
Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Ru Wang, Shichang Zou,