Monte Carlo calculation of energy loss of hydrogen and helium ions transmitted under channelling conditions in silicon single crystal

In this work, we report on calculations of the electronic channelling energy loss of hydrogen and helium ions along Si〈1 0 0〉 and Si〈1 1 0〉 axial directions for the low energy range by using the Monte Carlo simulation code. Simulated and experimental data are compared for protons and He ions in the 〈1 0 0〉 and 〈1 1 0〉 axis of silicon. A reasonable agreement was found.Computer simulation was also employed to study the angular dependence of energy loss for 0.5, 0.8, 1, and 2 MeV channelled 4He ions transmitted through a silicon crystal of 3 μm thickness along the 〈1 0 0〉 axis.