کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686773 | 1010622 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties changes induced by electron radiation at TiO2/Si interface
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical properties changes induced by electron radiation at TiO2/Si interface Electrical properties changes induced by electron radiation at TiO2/Si interface](/preview/png/1686773.png)
چکیده انگلیسی
TiO2/Si structures were fabricated by electron beam evaporation, and exposed to electron beam irradiation to investigate their electrical properties using the high frequency capacitance-voltage measurements. It was found that samples annealed in oxygen became more radiation resistant than un-annealed samples, which can be explained by the Ti valence variations induced by radiation. The samples were characterized by X-ray diffraction to show the Ti2O3 crystalline phase transformed to anatase-crystalline phase after oxygen annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 9, 1 May 2010, Pages 1446-1449
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 9, 1 May 2010, Pages 1446-1449
نویسندگان
Chengshi Liu, Dengxue Wu, Lili Zhao, Zhijun Liao,