Improved recrystallization behavior by additional irradiation of Mn+-implanted GaAs studied by Raman scattering

Raman spectroscopy was employed to study the evolution of host lattice recrystallization in Mn+-implanted GaAs both prior to and following irradiation with Ga, As and H ions. The additional irradiation stimulates the regrowth of the host lattice after a thermal anneal of 920 °C. A competitive process between post-implantation-induced damage and recovery in the crystallization process of amorphous GaAs was observed. At a As+ fluence level exceeding 8 × 1015 cm−2, the self-implantation-enhanced recovery of the crystal dominates the regrowth stage. The vacancy supersaturation produced during additional irradiation is mainly responsible for the enhancement of recrystallization in Mn+-implanted GaAs.