Interaction of SiF3 with silicon surface: Molecular dynamics simulation

Molecular dynamics simulations are performed to investigate SiF3 continuously bombarding the amorphous silicon surface with energies of 10, 25, 50 and 100 eV at normal incidence and room temperature. At 10 eV, the saturation of F and Si deposition on the surface is observed. At above 10 eV, the transition from deposition to etch occurs. SixFy interfacial layer is formed whose thickness increases with incident energy.