Photoluminescence and radiation effect of Er and Pr implanted silicon-rich silicon oxide thin films

Er and Pr ions were implanted into silicon-rich silicon oxide (SRSO) thin films with Si crystals embedded in SiO2 matrix. The 525 and 546 nm luminescence peaks were clearly observed in Er-only doped film, but disappeared in the photoluminescence (PL) spectra of Er–Pr codoped films. Instead, a broad PL spectrum extending from 450 to 700 nm was obtained for Er–Pr codoped films with Er/Pr concentration ratio of 1. Concentration profiles of Si, Er and Pr ions in films were simulated by SRIM2006 and related radiation effect on PL response was also discussed. Our results indicate that this material is a potential candidate for the development of white light-emitting diode (LED) and field emission displays for its visible luminescence.