کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1687259 | 1518754 | 2009 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Charge collection efficiency mapping of interdigitated 4H–SiC detectors Charge collection efficiency mapping of interdigitated 4H–SiC detectors](/preview/png/1687259.png)
The Ion Beam Induced Charge (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H–SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side.IBIC maps were obtained using focused proton beams with energies of 0.9 and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact).These different experimental conditions have been modeled using a two-dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent agreement between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 12–13, 15 June 2009, Pages 2197–2202