کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1687262 | 1518754 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of an ion-milled Si/Cr multilayer using micro-RBS, ellipsometry and AES depth profiling techniques
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of an ion-milled Si/Cr multilayer using micro-RBS, ellipsometry and AES depth profiling techniques Investigation of an ion-milled Si/Cr multilayer using micro-RBS, ellipsometry and AES depth profiling techniques](/preview/png/1687262.png)
چکیده انگلیسی
To investigate the details of the ion beam induced mixing and validate the Auger electron spectroscopy depth profiling technique, sputter-deposited Si 40 nm/Cr 40 nm multilayer samples were irradiated with a 20 keV CF4+ ion beam. Due to the ion bombardment the top Si layer was damaged and a crater was created. Elemental depth profiles and layer thicknesses together with surface topography were measured with Rutherford backscattering spectrometry by applying a focussed 2 MeV He+ beam. The thickness of the top Si layer was also determined from ellipsometry measurements. The results are compared to that of obtained from Auger electron spectroscopy depth profiling.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 12–13, 15 June 2009, Pages 2212–2215
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 12–13, 15 June 2009, Pages 2212–2215
نویسندگان
A. Simon, A. Sulyok, M. Novák, G. Juhász, T. Lohner, M. Fried, A. Barna, R. Huszank, M. Menyhárd,