Chiral silicon nanostructures

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 °C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 °C to 800 °C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 °C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment.