SHI induced single-phase InSe formation at lower annealing temperature

In/Se bilayer films, irradiated using 40 MeV silicon ions, with a fluence of 1 × 1013 ions/cm2, were vacuum annealed at 50 °C and 100 °C for 1 h. Optical and structural properties were studied using optical absorption and X-ray diffraction measurements respectively. Irradiated sample, annealed at 50 °C had both InSe and In2Se3 phases. Annealing the sample at 100 °C resulted in the elimination of In2Se3 phase and formation of InSe along (0 0 6) plane in the irradiated system. Absorption measurements also showed only one absorption edge, corresponding to InSe phase. In the case of un-irradiated In/Se system, annealing at 400 °C for 1 h was required to obtain single-phase indium selenide. Thus it was observed that single-phase indium selenide was formed at much lower annealing temperature in irradiated system in comparison with un-irradiated system.