Modeling of ion beam induced damage in Si during channeling Rutherford backscattering spectrometry analysis

We have modeled damage creation by an analyzing beam during channeling Rutherford backscattering spectrometry (RBS) analysis. Based on classic scattering theory and the assumption that only a dechanneled ion beam can cause displacements, a chi-square approach is used to fit the modeled spectra with experimental profiles, to extract the dechanneling cross section and the displacement creation efficiency. The study has shown that, for a 2.0 MeV He beam channeled along a Si(1 0 0) axis, the efficiency of defect creation by dechanneled beams is about 8% of the value predicted from the Kichin–Pease model. This suggests a significant dynamic annealing of point defects. The modeling procedure in this work can be used to predict the displacement creation during channeling RBS analysis.