IBA of ZrO2:Yb/Si thin films produced by the spray pyrolysis method

A spray pyrolysis method was used to produce thin films of ZrO2 doped with different Yb concentrations on Si(1 0 0). The films of these ionic semiconductors have potential applications as solid electrolytes in modern ceramic fuel cells of second generation. The determination of the atomic composition of the films is very important because it strongly affects the chemical and thermal stability, as well as electrical properties of the films. A combination of two Ion Beam Analysis (IBA) methods was applied to obtain the atomic composition of the films. A nuclear reaction analysis (NRA) method using a low energy deuterium beam was applied to measure the oxygen content of the films. Heavy ion Rutherford backscattering (HI-RBS) method using a 12C3+ beam was applied to measure the Yb and Zr atomic profiles of the samples. X-ray diffraction (XRD) and ellipsometry were also employed to determine structural properties and refractive index of the films, respectively. The IBA, XRD and the ellipsometry supply a wide range of information about the film layers, which can be used for qualification as well as for feedback to the films production.