کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1687770 1010682 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films
چکیده انگلیسی
Rutherford Backscattering Spectrometry (RBS) is a powerful tool for the quantitative characterization of the depth profile and the crystallinity of such structures, and channeling contrast microscopy (CCM), which employs a focused ion beam in order to obtain laterally resolved channeling yield data, is ideally suited to determine micro structural characteristics, (e.g. defect densities, tilts in lattice planes, strain) of such samples. Here we report results from proton channeling contrast measurements of laterally overgrown ZnO thin films. The results show that high crystal quality ZnO films can be grown using the ELO method. Cross-sectional scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and CCM are used to study the morphology and microstructure of the ELO ZnO films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 260, Issue 1, July 2007, Pages 299-303
نویسندگان
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