کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1687770 | 1010682 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Rutherford Backscattering Spectrometry (RBS) is a powerful tool for the quantitative characterization of the depth profile and the crystallinity of such structures, and channeling contrast microscopy (CCM), which employs a focused ion beam in order to obtain laterally resolved channeling yield data, is ideally suited to determine micro structural characteristics, (e.g. defect densities, tilts in lattice planes, strain) of such samples. Here we report results from proton channeling contrast measurements of laterally overgrown ZnO thin films. The results show that high crystal quality ZnO films can be grown using the ELO method. Cross-sectional scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and CCM are used to study the morphology and microstructure of the ELO ZnO films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 260, Issue 1, July 2007, Pages 299-303
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 260, Issue 1, July 2007, Pages 299-303
نویسندگان
Hailong Zhou, Hui Pan, Taw Kuei Chan, Chee Sheng Ho, Yanping Feng, Soo-Jin Chua, Thomas Osipowicz,