MD simulation of Ar scattering from defected Si(1 0 0) at grazing incidence

In the present study we present molecular dynamics simulations of Ar scattering from perfect and point-defected Si(1 0 0) surfaces at grazing incidence. For scattering from the smooth surface, the effect of changing the incidence angle on surface channeling is presented. Point defects are simulated by the random addition of adatoms to the smooth surface. The simulated results demonstrate that the angular and energy distributions of the scattered particles are extremely sensitive to small adatom coverages. Experimentally, the bulk of energy lost during scattering at grazing incidence is as a result of inelastic energy loss processes. An electron-stopping model is included in the simulations to account for such inelastic processes.