کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1687865 1010688 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of residual oxygen in Si(1 1 1)-7 × 7 surface on Si+ and Si2+ sputter yields
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Effect of residual oxygen in Si(1 1 1)-7 × 7 surface on Si+ and Si2+ sputter yields
چکیده انگلیسی

Effect of the residual oxygen impurity on the secondary ion yields in the sputtering from the Si(1 1 1)-7 × 7 surface bombarded by the 11 keV Ar0 neutral beam has been studied with use of a time-of-flight technique. Even if the oxygen concentration is much less than the detection limit of the present Auger electron spectrometer, not only Si+ and Si2+ ions but also SiO+ and SiO2+ ions have been significantly detected. As the oxygen ion yield, estimated from SiO+ and SiO2+ signals, increases, the Si+ yield is enhanced, whereas the Si2+ yield is reduced. The enhancement of the Si+ yield may be ascribed to the large electron affinity of O in comparison to that of Si, while the decrease in the Si2+ yield could be explained in terms of the inter-atomic Auger transition between O and one of the precursors for Si2+ (viz. an excited Si+ with a 2p hole, Si+∗), which efficiently interferes with the production of Si2+.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 258, Issue 1, May 2007, Pages 230–233
نویسندگان
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