کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1687876 1010688 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature dependence of the D–H replacement rates in D-implanted oxide ceramics exposed to H2O vapor
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Temperature dependence of the D–H replacement rates in D-implanted oxide ceramics exposed to H2O vapor
چکیده انگلیسی

Temperature dependence of the D–H replacement rates in D-implanted BaCe0.9Y0.1O3-δ exposed to H2O vapor has been studied by means of the ERD technique with MeV He+ ion beam. It is found that the decay constant of D, namely D–H replacement rate increases monotonically as the specimen temperature is elevated from the implantation (room) temperature up to 50 °C. The concentration of H absorbed in the specimen by the D–H replacement is also found to be almost comparable to the implantation concentration of D, while the concentration of D implanted and H absorbed by the D–H replacement are reduced when the specimen is annealed in the vacuum. The apparent activation energy for the decay constant of D at elevated temperatures is found to be 0.70 eV, which is considerably higher than the one which is expected to be obtained at cooling temperatures below the implantation temperature. No reduction in the concentration of H absorbed by the D–H replacement is ascribed to enough fast absorption of H due to splitting of H2O at the surface, in comparison with thermal release of D and H. The higher activation energy for the decay constant of D is also ascribed to the contribution of thermal detrapping to emission of D2 and HD due to the local molecular recombination of D and H detrapped thermally with D and H in traps.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 258, Issue 1, May 2007, Pages 282–286
نویسندگان
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